Title :
Influence of grain size on defect-related early failures in VLSI interconnects
Author :
Menon, S.S. ; Gorti, A.K. ; Poole, K.F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
fDate :
March 31 1992-April 2 1992
Abstract :
A model for the effect of grain size on the defect-related early failures is proposed, and experimental work that supports the model reported. In addition, the differences between life-test results at accelerated and at use conditions are shown to cause problems when extrapolation of early failure times is attempted from accelerated life-tests, in the case of small-grain-size metallizations. Significant differences in the way defects influence the failure distributions at 80 degrees C and 200 degrees C indicate that it is nontrivial to determine early failure times by extrapolation of accelerated life-test results of operating conditions, when the grain size is small.<>
Keywords :
VLSI; failure analysis; grain size; life testing; metallisation; 200 degC; 80 degC; VLSI interconnects; accelerated life-test results; defect-related early failures; grain size; Acceleration; Current density; Electromigration; Extrapolation; Grain size; Life testing; Metallization; Semiconductor device reliability; Thermal stresses; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium 1992. 30th Annual Proceedings., International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0473-X
DOI :
10.1109/RELPHY.1992.187672
