Title :
Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks
Author :
Southwick, Richard G., III ; Reed, J. ; Buu, C. ; Bui, H. ; Butler, R. ; Bersuker, G. ; Knowlton, W.B.
Author_Institution :
Department of Electrical & Computer Engineering, Boise State University, Boise ID
Keywords :
Hafnium oxide; Temperature dependence;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796130
