• DocumentCode
    2923118
  • Title

    Temperature (6-300K) Dependence Comparison of Carrier Transport Mechanisms in HfO2/SiO2 and SiO2 MOS Gate Stacks

  • Author

    Southwick, Richard G., III ; Reed, J. ; Buu, C. ; Bui, H. ; Butler, R. ; Bersuker, G. ; Knowlton, W.B.

  • Author_Institution
    Department of Electrical & Computer Engineering, Boise State University, Boise ID
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Firstpage
    1
  • Lastpage
    21
  • Keywords
    Hafnium oxide; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    South lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796130
  • Filename
    4796130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923118