A new mechanism for degradation of Al-Si-Cu/TiN/Ti contacted p-n junction

Author

Yoshida, Takehito ; Kawahara, Hiroyuki ; Ogawa, Shin-ichi

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

fYear

1992

fDate

March 31 1992-April 2 1992

Firstpage

344

Lastpage

348

Abstract

A new degradation mechanism that involves time dependent p-n junction characteristics is described. It has been found that reverse bias leakage current of the p-n junctions increases during reverse bias and temperature aging stress. It it clarified that this p-n junction degradation is dependent on crystallinity of the Ti-Si interdiffused layer at the contact interface in the Al-Si-Cu/TiN/Ti/Si substrate structure. In the case of an amorphous Ti-Si layer, the degradation is caused by diffusion of positively ionized Ti enhanced by the applied electric field.<>

Keywords

VLSI; ageing; aluminium alloys; copper alloys; metallisation; p-n junctions; silicon alloys; titanium; titanium compounds; AlSiCu-TiN-Ti-Si; Si; applied electric field; contact interface; contacted p-n junction; crystallinity; degradation; interdiffused layer; positively ionized layer; reverse bias leakage current; temperature aging stress; time dependent p-n junction characteristics; Amorphous materials; Annealing; Crystallization; Degradation; Diodes; Metastasis; P-n junctions; Stress; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1992. 30th Annual Proceedings., International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0473-X

Type

conf

DOI

10.1109/RELPHY.1992.187678

Filename

187678