Title :
Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectrics
Author :
Lee, Tackhwi ; Park, S. ; Lee, Jack ; Banerjee, Sanjay K.
Author_Institution :
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin
Abstract :
Intrinsic TDDB of the thin bilayered Dy2O3/HfO2 gate oxide has been discussed Physical based breakdown model suggested Defect density extracted by introducing the oxide thinning model The effective activation energy is calculated
Keywords :
Dielectric breakdown; Electric breakdown; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Lifting equipment; MOSFET circuits; Microelectronics;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796132
