Title :
Geometry effects on the NBTI degradation of PMOS transistors
Author :
Math, Gaëtan ; Benard, Christelle ; Ogier, Jean-Luc ; Goguenheim, Didier
Author_Institution :
ST Microelectronics, Rousset; CNRS, Institut Matériaux, Microélectronique et Nanosciences de Provence (IM2NP, UMR 6242)
Keywords :
Area measurement; Degradation; Density measurement; Geometry; MOSFETs; Microelectronics; Niobium compounds; Stress measurement; Thickness measurement; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796133
