DocumentCode

2923180

Title

Geometry effects on the NBTI degradation of PMOS transistors

Author

Math, Gaëtan ; Benard, Christelle ; Ogier, Jean-Luc ; Goguenheim, Didier

Author_Institution

ST Microelectronics, Rousset; CNRS, Institut Matériaux, Microélectronique et Nanosciences de Provence (IM2NP, UMR 6242)

fYear

2008

fDate

12-16 Oct. 2008

Firstpage

1

Lastpage

15

Keywords

Area measurement; Degradation; Density measurement; Geometry; MOSFETs; Microelectronics; Niobium compounds; Stress measurement; Thickness measurement; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International

Conference_Location

South lake Tahoe, CA, USA

ISSN

1930-8841

Print_ISBN

978-1-4244-2194-7

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2008.4796133

Filename

4796133