Title :
Study of Transistor and Product NBTI Lifetime Distributions
Author :
Qin, Jin ; Yan, Baoguang ; Shoshany, Yossi ; Roy, Druker ; Rahamim, Hezi ; Marom, Haim ; Bernstein, Joseph B.
Author_Institution :
Reliability Engineering, University of Maryland, College Park, College Park, MD 20740. Phone: 301-405-0767 Email: qjin@umd.edu
Abstract :
Simulation provides more insights of NBTI at low cumulative failure which is not easy to obtain through measurement. Monte-Carlo simulation has demonstrated that NBTI lifetime distribution at transistor level follows lognormal distribution. Rare-Event simulation shows that Weibull distribution fits better than lognormal distribution at product level. Analysis of 90nm SRAM NBTI accelerated test results confirms the product level simulation result.
Keywords :
Degradation; Educational institutions; Extrapolation; Life estimation; Life testing; Niobium compounds; Random access memory; Reliability engineering; Titanium compounds; Weibull distribution;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796134
