DocumentCode :
2923282
Title :
Negative Bias Temperature Stress on PFETs within fast Wafer Level Reliability Monitoring
Author :
Vollertsen, R.-P. ; Reisinger, H. ; Schlünder, C.
Author_Institution :
Infineon Technologies AG, Otto-Hahn-Ring 6, 81739 Munchen, Germany
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
1
Lastpage :
17
Keywords :
Monitoring; Stress; Temperature; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796139
Filename :
4796139
Link To Document :
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