Title :
Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and HK Gate Stacks
Author :
Grasser, Tibor ; Kaczer, Ben ; Aichinger, Thomas ; Goes, Wolfgang ; Nelhiebel, Michael
Author_Institution :
CDL for TCAD, TU Vienna, Wien, Austria
Keywords :
Acceleration; Degradation; Interface states; Negative bias temperature instability; Niobium compounds; Stress; Temperature dependence; Thermal force; Titanium compounds; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2008.4796140
