• DocumentCode
    2923324
  • Title

    The Effect of the Subthreshold Slope Degradation on NBTI Device Characterization

  • Author

    Brisbin, D. ; Chaparala, P.

  • Author_Institution
    National Semiconductor Corporation, Santa Clara, CA
  • fYear
    2008
  • fDate
    12-16 Oct. 2008
  • Abstract
    A new fast switching NBTI measurement method was introduced based on applying alternating VGS test conditions to determine SS-NBTI results using this new method show that unexpectedly SS decreases (improves) with stress time ?? It was determined that SS improves during NBTI Stress because device |VT| increases effectively moving the VGS @ test point to a reduced |ID| point ?? An improvement in the pending NBTI JEDEC test standard was proposed which consists of incrementing the test VGS after each stress interval effectively keeping the test point at ID(0) - NBTI results from this improved method were in qualitative agreement with post stress ID-VGS results
  • Keywords
    Degradation; Delay effects; Lead compounds; Measurement standards; Measurement techniques; Niobium compounds; Semiconductor device testing; Stress measurement; Time measurement; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
  • Conference_Location
    S. Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-2194-7
  • Type

    conf

  • DOI
    10.1109/IRWS.2008.4796141
  • Filename
    4796141