DocumentCode :
2923324
Title :
The Effect of the Subthreshold Slope Degradation on NBTI Device Characterization
Author :
Brisbin, D. ; Chaparala, P.
Author_Institution :
National Semiconductor Corporation, Santa Clara, CA
fYear :
2008
fDate :
12-16 Oct. 2008
Abstract :
A new fast switching NBTI measurement method was introduced based on applying alternating VGS test conditions to determine SS-NBTI results using this new method show that unexpectedly SS decreases (improves) with stress time ?? It was determined that SS improves during NBTI Stress because device |VT| increases effectively moving the VGS @ test point to a reduced |ID| point ?? An improvement in the pending NBTI JEDEC test standard was proposed which consists of incrementing the test VGS after each stress interval effectively keeping the test point at ID(0) - NBTI results from this improved method were in qualitative agreement with post stress ID-VGS results
Keywords :
Degradation; Delay effects; Lead compounds; Measurement standards; Measurement techniques; Niobium compounds; Semiconductor device testing; Stress measurement; Time measurement; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Type :
conf
DOI :
10.1109/IRWS.2008.4796141
Filename :
4796141
Link To Document :
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