Title :
Reliability Guard Band Reduction by Differential Targeting of pMOS Gate Oxide Thickness
Author :
Geilenkeuser, R. ; Wieczorek, K. ; Trentzsch, M. ; Graetsch, F. ; Bayha, B. ; Samohvalov, V. ; Paetzold, T. ; Schink, T.
Author_Institution :
AMD Fab 36 LLC & Co. KG, Dresden, Germany
Abstract :
This article consists of a collection of slides from the author´s conference presentation. Some of the specific areas/topics discussed include: Introduction; Experimental; Device degradation sensitivity studies; Differential GOX thickness tuning; Product Wearout; and a Summary.
Keywords :
Degradation; Extrapolation; Frequency; Niobium compounds; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-2194-7
DOI :
10.1109/IRWS.2008.4796142
