DocumentCode :
2923380
Title :
The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs
Author :
Campbell, J.P. ; Qin, J. ; Cheung, K.P. ; Yu, L. ; Suehle, J.S. ; Oates, A. ; Sheng, K.
Author_Institution :
Semiconductor Electronics Division, NIST
fYear :
2008
fDate :
12-16 Oct. 2008
Firstpage :
1
Lastpage :
16
Keywords :
MOSFETs; Telegraphy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2008. IRW 2008. IEEE International
Conference_Location :
South lake Tahoe, CA, USA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-2194-7
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2008.4796143
Filename :
4796143
Link To Document :
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