The THz emission properties of GaAs photoconductive antenna with strong electric fields

Author

Xue Hong

Author_Institution

Sch. of Phys. & Electr. Eng., Weinan Teachers Univ., Weinan, China

fYear

2012

fDate

22-26 Oct. 2012

Firstpage

1188

Lastpage

1191

Abstract

The terahertz (THz) emission properties of GaAs photoconductive antennas with strong electric fields are discussed; the transient transport characteristics of non-equilibrium carriers (hot electrons) within the photoconductive antenna were comparatively analyzed. It is shown that there are significant differences in the average drift velocity variation with strong and weak electric field. In the initial phase, optical wave scattering is mainly caused by small-angle scattering, carriers are accelerated by ballistic transport to reach higher electron energy in a shorter time, and the transient drift-velocity quickly rises, which is a main reason of the stronger THz radiation.

Keywords

III-V semiconductors; antenna radiation patterns; ballistic transport; gallium arsenide; hot carriers; light scattering; photoconducting switches; terahertz wave devices; GaAs; THz emission property; average drift velocity variation; ballistic transport acceleration; electric field; electron energy; hot electron; nonequilibrium carrier; optical wave scattering; photoconductive switch antenna; small-angle scattering; terahertz emission property; transient drift-velocity; transient transport characteristics; Dipole antennas; Electric fields; Electrodes; Gallium arsenide; Optical switches; Semiconductor lasers; Strong Electric field; Terahertz (THz) Radiation; non-equilibrium carriers; photoconductive switches antenna;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas, Propagation & EM Theory (ISAPE), 2012 10th International Symposium on

Conference_Location

Xian

Print_ISBN

978-1-4673-1799-3

Type

conf

DOI

10.1109/ISAPE.2012.6408990

Filename

6408990