Title :
Current induced light emission from nanocrystalline silicon structures
Author :
Lang, W. ; Richter, A. ; Steiner, P. ; Kozlowski, F. ; Sandmaier, H. ; Ruge, I.
Author_Institution :
Fraunhofer Inst. for Solid State Technol., Munich, Germany
Abstract :
The photoluminescence and electroluminescence of light emitting porous silicon (LEPOS) are described. The porous silicon is made by anodic dissolution of silicon in HF with an applied electrical current and illumination with visible light. Photoluminescence is observed using ultraviolet light, and visible electroluminescence is achieved by applying a voltage to a solid-state contact on top of the porous layer. The luminescence, the structure, and the composition of LEPOS are studied
Keywords :
anodisation; dissolving; electroluminescence; elemental semiconductors; etching; luminescence of inorganic solids; nanostructured materials; photoluminescence; porous materials; silicon; LEPOS; anodic dissolution; anodic etching; applied electrical current; current induced light emission; electroluminescence; elemental semiconductor; illumination with visible light; nanocrystalline structures; photoluminescence; porous Si; ultraviolet light; Doping; Electroluminescence; Etching; Hafnium; Luminescence; Nanostructures; Optical films; Photoluminescence; Silicon; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 1992, MEMS '92, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robot. IEEE
Conference_Location :
Travemunde
Print_ISBN :
0-7803-0497-7
DOI :
10.1109/MEMSYS.1992.187698
