• DocumentCode
    2923510
  • Title

    Wafer bonding for the fabrication of high-performance photodetectors: a mature technology ?

  • Author

    Pauchard, A. ; Pan, Z. ; Bitter, M. ; Kang, Y. ; Mages, P. ; Hummel, S.G. ; Yu, P.K.L. ; Lo, Y.H.

  • Author_Institution
    Nova Crystals, Inc, San Jose, CA, USA
  • Volume
    2
  • fYear
    2002
  • fDate
    10-14 Nov. 2002
  • Firstpage
    677
  • Abstract
    Summary form only given. Significant progress has been achieved towards the demonstration of direct wafer bonded photodetectors. This device design approach offers the freedom to combine dissimilar materials in order to fabricate novel device structures not obtainable using standard techniques. Significant device performance advantages have been demonstrated in specific device applications using wafer bonding. The results summarized here demonstrate additional progress towards defining wafer bonding as a mature technology - a manufacturable and cost-effective process applied to APDs that portends commercial application.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; silicon; wafer bonding; InGaAs-Si; InGaAs/Si APD device; device performance advantages; direct wafer bonded photodetectors; high-performance photodetectors; manufacturable cost-effective process; wafer bonding; Dark current; Fabrication; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Tensile stress; Thermal stresses; Vertical cavity surface emitting lasers; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7500-9
  • Type

    conf

  • DOI
    10.1109/LEOS.2002.1159487
  • Filename
    1159487