DocumentCode :
2923510
Title :
Wafer bonding for the fabrication of high-performance photodetectors: a mature technology ?
Author :
Pauchard, A. ; Pan, Z. ; Bitter, M. ; Kang, Y. ; Mages, P. ; Hummel, S.G. ; Yu, P.K.L. ; Lo, Y.H.
Author_Institution :
Nova Crystals, Inc, San Jose, CA, USA
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
677
Abstract :
Summary form only given. Significant progress has been achieved towards the demonstration of direct wafer bonded photodetectors. This device design approach offers the freedom to combine dissimilar materials in order to fabricate novel device structures not obtainable using standard techniques. Significant device performance advantages have been demonstrated in specific device applications using wafer bonding. The results summarized here demonstrate additional progress towards defining wafer bonding as a mature technology - a manufacturable and cost-effective process applied to APDs that portends commercial application.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; silicon; wafer bonding; InGaAs-Si; InGaAs/Si APD device; device performance advantages; direct wafer bonded photodetectors; high-performance photodetectors; manufacturable cost-effective process; wafer bonding; Dark current; Fabrication; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Tensile stress; Thermal stresses; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159487
Filename :
1159487
Link To Document :
بازگشت