DocumentCode
2923510
Title
Wafer bonding for the fabrication of high-performance photodetectors: a mature technology ?
Author
Pauchard, A. ; Pan, Z. ; Bitter, M. ; Kang, Y. ; Mages, P. ; Hummel, S.G. ; Yu, P.K.L. ; Lo, Y.H.
Author_Institution
Nova Crystals, Inc, San Jose, CA, USA
Volume
2
fYear
2002
fDate
10-14 Nov. 2002
Firstpage
677
Abstract
Summary form only given. Significant progress has been achieved towards the demonstration of direct wafer bonded photodetectors. This device design approach offers the freedom to combine dissimilar materials in order to fabricate novel device structures not obtainable using standard techniques. Significant device performance advantages have been demonstrated in specific device applications using wafer bonding. The results summarized here demonstrate additional progress towards defining wafer bonding as a mature technology - a manufacturable and cost-effective process applied to APDs that portends commercial application.
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; silicon; wafer bonding; InGaAs-Si; InGaAs/Si APD device; device performance advantages; direct wafer bonded photodetectors; high-performance photodetectors; manufacturable cost-effective process; wafer bonding; Dark current; Fabrication; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Tensile stress; Thermal stresses; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7500-9
Type
conf
DOI
10.1109/LEOS.2002.1159487
Filename
1159487
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