Title :
Modulation-doped Asymmetric Multi-Quantum-Well Structures for Flat Broadband Gain Spectrum
Author :
Chen, C.Y. ; Feng, J.Y. ; Lin, E.Y. ; Lay, T.S. ; Chang, T.Y.
Author_Institution :
Institute of Electro-Optical Engineering, National Sun Yat-Sen University Kaohsiung 804, Taiwan ROC Email: D933050008@student.nsysu.edu.tw; Fax: 886-7-5254499
Abstract :
Asymmetric InGaAs/InGaAlAs multiple quantum well structures containing three pairs of different well widths have been grown by MBE. P-type modulation-doping has been found to significantly improve the flatness of the remarkably broad photoluminescence spectrum.
Keywords :
Composite materials; Epitaxial layers; Indium gallium arsenide; Optical fiber communication; Optical materials; PIN photodiodes; Photoluminescence; Quantum well lasers; Semiconductor optical amplifiers; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569572
