10 Gbps all silicon APD optical receiver

Author

Yang, B. ; Schaub, J.D. ; Csutak, S.M. ; Campbell, J.C.

Author_Institution

Texas Univ., Austin, TX, USA

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

681

Abstract

Summary form only given. In this paper, we report an all silicon optical receiver operating at 10 Gbps. A high quantum efficiency-bandwidth product was achieved by operating the photodiode in the avalanche regime. Planar p-i-n photodiodes were fabricated using standard CMOS technology on commercially available 2 μm SOI substrates. The photodiodes exhibited 3 dB optical bandwidth greater than 8 GHz. At higher bias, avalanche gain was observed. In this work, the photodiode was wire-bonded to a 10 Gbps transimpedance amplifier (TIA).

Keywords

CMOS integrated circuits; avalanche photodiodes; integrated optoelectronics; optical receivers; p-i-n photodiodes; silicon-on-insulator; 10 Gbit/s; 10 Gbps all silicon APD optical receiver; 2 micron; 3 dB optical bandwidth; 8 GHz; CMOS technology; SOI substrate; Si-SiO₂; avalanche gain; avalanche regime; high quantum efficiency-bandwidth product; planar p-i-n photodiodes; transimpedance amplifier; wire bonding; Bit rate; CMOS process; CMOS technology; Optical amplifiers; Optical fiber communication; Optical receivers; Optical transmitters; Photodiodes; Silicon; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159489

Filename

1159489