Title :
First Demonstration of MSM Photodetectors in Bulk GaInNAs Layers
Author :
Hsu, S.H. ; Su, Y.K. ; Chang, S.J. ; Chuang, R.W. ; Chen, W.C.
Author_Institution :
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Taiwan 710, Tainan; q1891119@ccmail.ncku.edu.tw
Abstract :
Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga0.85In0.15N0.011As0.989epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.2μm.
Keywords :
Absorption; Charge carrier lifetime; Gallium arsenide; Leakage current; Nitrogen; Optical fiber communication; Optical materials; Photoconductivity; Photodetectors; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569576
