• DocumentCode
    2923571
  • Title

    First Demonstration of MSM Photodetectors in Bulk GaInNAs Layers

  • Author

    Hsu, S.H. ; Su, Y.K. ; Chang, S.J. ; Chuang, R.W. ; Chen, W.C.

  • Author_Institution
    Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University Taiwan 710, Tainan; q1891119@ccmail.ncku.edu.tw
  • fYear
    2005
  • fDate
    30-02 Aug. 2005
  • Firstpage
    861
  • Lastpage
    862
  • Abstract
    Metal-Semiconductor-Metal (MSM) photodetectors with thick Ga0.85In0.15N0.011As0.989epilayers were fabricated. With small amount of incorporating nitrogen, thick and dislocation-free GaInNAs/GaAs material for absorption layers can be achieved. Photocurrent spectra show that a responsivity higher than 0.06 A/W at 4V is obtained with a cutoff wavelength of 1.2μm.
  • Keywords
    Absorption; Charge carrier lifetime; Gallium arsenide; Leakage current; Nitrogen; Optical fiber communication; Optical materials; Photoconductivity; Photodetectors; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
  • Print_ISBN
    0-7803-9242-6
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2005.1569576
  • Filename
    1569576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2923571