DocumentCode :
2923696
Title :
Polycrystalline silicon thin-film solar cell prepared by the solid phase crystallization (SPC) method
Author :
Baba, T. ; Matsuyama, T. ; Sawada, T. ; Takahama, T. ; Wakisaka, K. ; Tsuda, S. ; Nakano, S.
Author_Institution :
New Mater. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Volume :
2
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
1315
Abstract :
A solid phase crystallization (SPC) method was applied to the fabrication of thin-film polycrystalline silicon (poly-Si) for solar cells for the first time. Among crystalline silicon solar cells crystallized at a low temperature of less than 600°C, the world´s highest conversion efficiency of 8.5% was achieved in a solar cell using thin-film poly-Si with only 10 μm thickness prepared by the SPC method. This solar cell showed high photosensitivity in the long-wavelength region of more than 800 nm and also exhibited no light-induced degradation after light exposure
Keywords :
crystallisation; elemental semiconductors; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; solar cells; 10 mum; 8.5 percent; Si; conversion efficiency; high photosensitivity; light exposure; long-wavelength region; nucleation layer; solid phase crystallization; thin film polycrystalline Si solar cells; Crystallization; Doping; Optical films; Photovoltaic cells; Plasma temperature; Semiconductor thin films; Silicon; Solids; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520188
Filename :
520188
Link To Document :
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