Title :
Effect of the Passivation Layers on Organic Light Emitting Diode
Author :
Chen, Wen-Ray ; Shih, Neng-Chi ; Juang, Fuh-Shyang
Author_Institution :
Department of Electrical Engineering, Southern Taiwan University of Technology, Tainan, Taiwan 710, R.O.C. Phone:+886-6-2533131 EXT 3328 E-mail: chenwr@mail.stut.edu.tw
Abstract :
Si3N4and SiO2layers were deposited onto the organic light-emitting diodes as a passivation layer to prevent the moisture and oxygen that degraded the OLED performance. Current-voltage (I-V), luminescence-voltage (L-V), and lifetime were measured and discussed. It was found that OLED passivated by a 100nm-thick SiO2has a larger lifetime and that passivated by Si3N4layer has a shorter lifetime due to the large plasma power damaging the sample surface.
Keywords :
OLED; passivation; Glass; Indium tin oxide; Moisture; Organic light emitting diodes; Passivation; Plasma devices; Plasma displays; Plasma measurements; Radio frequency; Thermal degradation; OLED; passivation;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569600
