Title :
Thin film polycrystalline Si by a novel solution growth technique [for solar cells]
Author :
Wallace, Richard L. ; Anderson, Wayne A. ; Jones, K.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
Abstract :
A solution growth technique has been developed capable of depositing large grain (up to 20-30 μm) Si films at temperatures no higher than 650°C for application as the base in a-Si:H/poly-Si heterojunction solar cells. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 1016 cm to the mid 1017 cm range. Conductivities as high as 0.2 (Ω cm)-1 were measured. Hall effect measurements showed hole mobilities as high as ~30 cm2 V-1 s-1. Photoresponse is reduced for films deposited with a wetting agent
Keywords :
X-ray diffraction; carrier density; crystal growth from solution; crystal microstructure; elemental semiconductors; hole mobility; scanning electron microscopy; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; texture; 0.2 (ohmcm)-1; 20 to 30 mum; Hall effect measurements; SEM examination; Si:H-Si; XRD analysis; a-Si:H/poly-Si heterojunction solar cells; carrier concentrations; grain structure; hole mobilities; large grain film deposition; photoresponse; solution growth technique; strong (111) preferred orientation; thin film polycrystalline semiconductor; wetting agent; Costs; Glass; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Surface morphology; Temperature; X-ray scattering;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520204
