DocumentCode :
2923996
Title :
17% efficient thin film silicon solar cell by liquid phase epitaxy
Author :
Weber, K.J. ; Blakers, A.W. ; Stocks, M.J. ; Stuckings, M.J. ; Cuevas, A. ; Carr, A.J. ; Brammer, T. ; Matlakowski, G.
Author_Institution :
Dept. of Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume :
2
fYear :
1994
fDate :
5-9 Dec 1994
Firstpage :
1391
Abstract :
Thin film silicon solar cells are attracting considerable interest as a possible means of achieving low cost while maintaining moderate to high cell efficiencies. In this paper we report on the results of our work to fabricate high efficiency cells on single crystal epitaxial layers. We use liquid phase epitaxy (LPE) to grow epitaxial layers of 30-50 μm thickness on heavily doped CZ substrates. Solar cells fabricated on these layers have displayed efficiencies up to 17.0%. A key factor in obtaining these high efficiencies is the incorporation of effective light trapping into the cell structure. This is achieved by removing most of the substrate after cell processing
Keywords :
elemental semiconductors; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; solar cells; substrates; 17 percent; 30 to 50 mum; LPE; Si; cell structure; epitaxial layers growth; heavily doped CZ substrates; high efficiency; light trapping; liquid phase epitaxy; single crystal epitaxial layers; thin film Si solar cells; Charge carrier lifetime; Costs; Crystallization; Epitaxial growth; Epitaxial layers; Photovoltaic cells; Semiconductor thin films; Silicon; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520207
Filename :
520207
Link To Document :
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