Title :
Thickness dependence of defect density in thin film silicon formed on insulator polycrystalline by zone-melting recrystallization [solar cells]
Author :
Takami, A. ; Arimoto, S. ; Naomoto, H. ; Hamamoto, S. ; Ishihara, T. ; Kumabe, H. ; Murotani, T.
Author_Institution :
Semicond. Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Formation technique of high quality thin film polycrystalline Si on insulator by zone-melting recrystallization (ZMR) was investigated for use in Si solar cell applications. Varying the thickness of polycrystalline Si of ZMR samples, thickness dependence of defect density in ZMR-Si films was studied. It was found that defect density of ZMR-Si film was strongly affected by thickness of polycrystalline Si. By thinning the polycrystalline Si film, defect density of ZMR-Si film was reduced to 3×106/cm2 without lowering scanning speed at ZMR process
Keywords :
crystal defects; elemental semiconductors; semiconductor device testing; semiconductor growth; semiconductor thin films; silicon; solar cells; zone melting; zone melting recrystallisation; defect density; fabrication; insulator polycrystalline; measurements; scanning speed; solar cell; thickness dependence; thin film semiconductors; zone-melting recrystallization; Ceramics; Dielectrics and electrical insulation; Laboratories; Optical films; Photovoltaic cells; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Sputtering; Substrates;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520208
