Title :
Optical properties of InGaAsP lattice matched to GaAs
Author :
Wallace, S.G. ; Robinson, B.J. ; Mascher, P. ; Thompson, D.A. ; Haugen, H.K. ; Dalacu, D. ; Martinu, L.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
Summary form only given.Significant advances have been made in recent years in the fabrication of high power diode lasers utilizing the aluminum free InGaAsP-GaAs material system, which has some advantages over the more commonly used AlGaAs system. Although numerous and detailed studies have been performed on the growth, fabrication and characterization of InGaAsP based lasers, very little has been reported on fundamental material properties, such as the index of refraction. From the perspective of designing optoelectronic devices such as diode lasers, a detailed knowledge of the optical constants of the materials at the relevant wavelengths is required. In this paper, the optical constants of InGaAsP, ranging in composition from GaAs to InGaP, are presented.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; optical materials; refractive index; semiconductor lasers; GaAs; InGaAsP; InGaAsP based lasers; InGaAsP-GaAs; InGaAsP-GaAs material system; InGaP; fundamental material properties; high power diode lasers; index of refraction; lattice matched; optical constants; optical fabrication; optical properties; semiconductor growth; Diode lasers; Gallium arsenide; Lattices; Material properties; Optical design; Optical device fabrication; Optical devices; Optical materials; Optical refraction; Optoelectronic devices;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907054