Title :
A performance simulation for the n+pp+ BSF and the bifacial silicon solar cells with additional irradiation from the backside of the cells
Author :
Matsukuma, Kunihiro ; Morita, Keiichi ; Tsukuda, Kazuhisa ; Shigeta, Hideaki
Author_Institution :
Kumamoto Inst. of Technol., Japan
Abstract :
In order to design high output power of the n+pp+ BSF solar cells and the n+pn+ transcells with both irradiation on the cells as for the bifacial cells, an exact analytical simulation program have been developed. The simulation revealed that output power of the transcell increases with the area ratio of the rear n+ collector. The simulations also revealed that additional reflected diffusive sunlight of 0.9 Sun on the rear transcell gives 30 mW/cm2 and the transcell with even a short lifetime of 10 μs and with the reflected diffusive sunlight of 0.3 gives 20 mW/cm2 and output power of the n+pp+ BSF solar cell fairly increases with the reflected diffusive sunlight
Keywords :
carrier lifetime; electronic engineering computing; elemental semiconductors; minority carriers; p-n heterojunctions; power engineering computing; semiconductor device models; silicon; solar cells; 10 mus; Si; backside irradiation; bifacial solar cells; computer simulation; lifetime; n+pn+ transcells; n+pp+ BSF solar cells; output power; performance simulation; rear n+ collector; reflected diffusive sunlight; semiconductor; Charge carrier processes; Current density; Electrodes; Electron emission; Equivalent circuits; Integral equations; Photovoltaic cells; Silicon; Temperature; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520214