Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells

Summary form only given.It has been shown theoretically and experimentally that the built-in strain in semiconductor heterostructures can be tuned with hydrostatic pressure. The pressure induced strain arises due to differences in compressibility of the materials composing a heterostructure. In InGaN-GaN multiple quantum wells, this effect generates a tensile strain in the InGaN layers that compensates the compressive built-in strain and effectively reduces the rate at which the bandgap blueshifts with pressure. In these materials which exhibit piezoelectric fields, the changes in strain with pressure should also affect the built-in field. We investigate the effect of pressure on Si-doped InGaN-GaN multiple quantum wells by monitoring the shift in energy, the peak emission energy of the well and barrier materials respectively.