Title :
Identifying the recombination losses that limit Voc in thin silicon solar cells by bifacial spectral response measurements
Author :
Bai, Y.B. ; Phillips, J.E. ; Barnett, A.M.
Author_Institution :
Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA
Abstract :
This paper describes techniques to identify recombination losses in solar cells. In particular, bifacial spectral response measurements made on operating devices can be used to separate the base and emitter contributions as well as gain insight into the surface passivation contributions to the diode saturation current density J0. The contributions of device thickness, surface passivation and contacts to J 0 are examined by varying the geometry. This separation of the contributions to J0 is integral to the design and fabrication of efficient thin silicon solar cells
Keywords :
current density; electrical contacts; electron-hole recombination; elemental semiconductors; losses; passivation; semiconductor device testing; silicon; solar cells; Si; base; bifacial spectral response measurements; contacts; device thickness; diode saturation current density; efficiency; emitter; fabrication; geometry; open-circuit voltage; recombination losses; surface passivation; thin silicon solar cells; Current density; Current measurement; Density measurement; Diodes; Fabrication; Gain measurement; Geometry; Particle measurements; Passivation; Photovoltaic cells;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520217
