Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

An analytical procedure to extract the surface recombination velocity of the SiO₂/n-type silicon interface, S_p, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S_p are significantly affected by the assumed material parameters for highly doped silicon, τ_p, μ_p and ΔE_g ^app. Updated values for these parameters are used to obtain the dependence of S_p on the phosphorus concentration, N_D, using both previous and new experimental data. The new evidence supports the finding that S_p increases strongly with N_D