Title :
Normal-incidence quantum dot infrared photodetectors
Author :
Chen, Zhonghui ; Ye, Zhengmao ; Kim, Eui-Tae ; Campbell, Joe C. ; Madhukar, Anupam
Author_Institution :
Dept. of Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We report on normal-incidence single and dual-wavelength intraband infrared photodetectors (with contacts in the vertical configuration) based on epitaxial InAs/InAlGaAs quantum dots.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum dots; IR detectors; InAs-InAlGaAs; dual-wavelength intraband infrared photodetectors; epitaxial InAs/InAlGaAs quantum dots; normal-incidence quantum dot infrared photodetectors; single-wavelength intraband infrared photodetectors; Atomic force microscopy; Dark current; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Nanostructured materials; Photodetectors; Quantum dots; Transmission electron microscopy; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159525
