Title :
Hafnium carbide CFE, TFE, and schottky electron sources
Author :
Mackie, William A. ; Lovell, Josh M. ; Magera, Gerald G.
Author_Institution :
Appl. Phys. Technol., Inc., McMinnville, OR, USA
Abstract :
We report on CFE and TFE cathodes using (310) oriented hafnium carbide. These have been operated in UHV and temperatures from 300 K to 1900 K. Emission data show dramatic increases while operating at elevated temperatures due to work function lowering. Artificial faceting using FIB techniques shows promise for this cathode operating in Schottky emission mode.
Keywords :
Schottky effect; cathodes; electron field emission; electron sources; focused ion beam technology; hafnium compounds; CFE cathode; CFE electron source; FIB technique; HfC; Schottky electron source; Schottky emission mode; TFE cathode; TFE electron source; artificial faceting; cold field emission; temperature 300 K to 1900 K; thermal-field emission; Cathodes; Electron sources; Hafnium; Hybrid fiber coaxial cables; Surface cleaning; Surface contamination; Temperature distribution; Schottky emission; carbide; cold field emission; electron source; hafnium carbide; thermal field emission;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-0368-2
DOI :
10.1109/IVESC.2012.6264168
