Title :
Stable field emission from nanoporous silicon carbide
Author :
Kang, Myung-Gyu ; Lezec, Henri J. ; Kallaher, Raymond L. ; Sharifi, Fred
Author_Institution :
Center for Nanoscale Sci. & Technol., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
We report on a new type of cold cathode field emission electron source capable of extremely high emission, producing current densities at levels comparable to thermal sources. Record stable emission in excess of 6 A/cm2 at 7.5 V/μm and a maximum current density of 11 A/cm2 at 9.0 V/μm are demonstrated. The emitter is a unique structure, comprised of a monolithic and rigid nanostructured foam with homogenously distributed emission sites. The fabrication process is simple and scalable, as it consists of wet chemistry and ion etching and does not require high temperature gas phase synthesis. Electric field enhancement is tunable and is set by a two-level hierarchy consisting of local nanostructure morphology and the macroscopic shape.
Keywords :
current density; field emitter arrays; foams; nanofabrication; nanoporous materials; silicon compounds; sputter etching; wide band gap semiconductors; SiC; cold cathode field emission electron source; current density; electric field enhancement; field emitter arrays; high-field emission stability; homogenously distributed emission sites; ion etching; macroscopic shape; monolithic emitter structure; nanoporous silicon carbide; nanostructure morphology; rigid nanostructured foam; thermal source; two-level hierarchy; wet chemistry; Cathodes; Current density; Educational institutions; Etching; Fabrication; Reliability; Silicon carbide; Field Emission; Nanotechnology; silicon carbide;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-0368-2
DOI :
10.1109/IVESC.2012.6264169