Title :
Ab initio model of intrinsic defects in Sc2O3 for thermionic cathode systems
Author :
Jacobs, Ryan M. ; Morgan, Dane ; Boo, John H.
Author_Institution :
Mater. Sci. Program, Univ. of Wisconsin-Madison, Madison, WI, USA
Abstract :
A defect model for Sc2O3 was developed using quantum mechanical modeling and evaluated under cathode operating conditions to determine the electronic properties of Sc2O3 used in cathode experiments. We find that Sc2O3 can conduct well enough with a sub-ppm impurity concentration such that the limiting step of emission is not conduction through bulk Sc2O3.
Keywords :
ab initio calculations; conduction bands; impurities; interstitials; scandium compounds; semiconductor materials; thermionic cathodes; vacancies (crystal); Sc2O3; ab initio calculation; conduction band; electronic properties; impurity concentration; interstitials; intrinsic defects; quantum mechanical modeling; semiconductor materials; thermionic cathode system; vacancies; Approximation methods; Cathodes; Computational modeling; Current density; Lattices; Temperature; Thermionic emission; ab initio modeling; intrinsic defects; scandate cathode; scandium oxide;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2012 IEEE Ninth International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-0368-2
DOI :
10.1109/IVESC.2012.6264181
