• DocumentCode
    2924855
  • Title

    Design of an ultrawide band low noise microstrip amplifier using 3D sonnet- based SVRM with particle swarm optimization for space applications

  • Author

    Demirel, Salih ; Gunes, F. ; Keskin, A.K.

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Yildiz Tech. Univ., Istanbul, Turkey
  • fYear
    2013
  • fDate
    12-14 June 2013
  • Firstpage
    445
  • Lastpage
    450
  • Abstract
    In this work, a determinististic, efficient design methodology is put forward to design a wide-band, low-noise microstrip amplifier, where the microstrip widths, lengths {W,ℓ} of the input/ output matching networks are obtained accurately and fast for a substrate {εr, h, tanδ} using the cost-effective 3D EM- based Support Vector Regression Machine (SVRM) microstrip model provided that ensuring the stable source ZS(ω) and load ZL(ω) terminations for the compatible {Noise F(ω) ≥ Fmin(ω), Input VSWR Vi(ω) ≥1, Gain GTmin(ω)>GT(ω)≥GTmax(ω), Bandwidth B} quadrates of the employed transistor. The 3D EM- based SVRM microstrip model provides the accurate and fast characterization of the equivalent transmission line in terms of the characteristic impedance Z0 and the dielectric constant εeff within the continuous domain of {0.1mm ≤ W ≤ 4.6 mm, 2 ≤ εr ≤ 10, 0.1mm ≤ h ≤ 2.2mm, 2GHz ≤ f ≤ 14GHz} in an efficient manner. In the modeling process, the substantial reduction (up to %64) is obtained utilizing sparseness of SVRM in the number of expensive fine discretization training data with the negligible loss in the predictive accuracy using the quasi-TEM microstrip synthesis formulas as the coarse model that allow to identify the regions of the design space requiring denser sampling. Moreover, the multi-objective amplifier design problem is reduced into the two single-objective design problems of the input(IM)/ output (OM)matching networks to provide the source ZS(ω) and load ZL(ω) terminations to the transistor, respectively. Finally the design methodology is applied to the design of typical wideband lo- -noise amplifiers of the transistor NE3512S02 within 3GHz and 8GHz using T-, II- L types of microstrip matching circuits satisfying the maximum gain provided the available minimum noise and a permitted amount of input mismatching at each operation frequency. In the design optimization of the IM/OM networks, a Memetic Algorithm (MA) in which a simple local optimizer called Nelder-Mead (NM) algorithm is used along with the global optimizer Particle Swarm (PSO) algorithm is used. Furthermore, typical T-T designed amplifier is validated using the Circuit Simulator AWR and 3 D EM Simulator SONNET.
  • Keywords
    SONET; aerospace computing; low noise amplifiers; microstrip circuits; microwave amplifiers; particle swarm optimisation; regression analysis; space vehicle electronics; support vector machines; ultra wideband technology; 3D EM-based SVRM microstrip model; 3D EM-based support vector regression machine microstrip model; 3D SONNET; AWR circuit simulator; IM-OM networks; NM algorithm; Nelder-Mead algorithm; PSO algorithm; SVRM; characteristic impedance; dielectric constant; equivalent transmission line; expensive fine discretization training data; input-output matching networks; memetic algorithm; microstrip matching circuits; multiobjective amplifier design problem; particle swarm optimization; quasiTEM microstrip synthesis formulas; single-objective design problems; space applications; transistor NE3512S02; ultrawide band low noise microstrip amplifier; Noise; Input VSWR; Microstripline; Microwave Amplifier; Noise Figure; Support Vector Regression Machine; Transducer Gain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Recent Advances in Space Technologies (RAST), 2013 6th International Conference on
  • Conference_Location
    Istanbul
  • Print_ISBN
    978-1-4673-6395-2
  • Type

    conf

  • DOI
    10.1109/RAST.2013.6581249
  • Filename
    6581249