DocumentCode
2924939
Title
Research on broad-band high-gain klystrons of megawatt output power level
Author
Delu, Nu
Author_Institution
Inst. of Electron., Acad. Sinica, Beijing, China
fYear
1996
fDate
12-15 Aug 1996
Firstpage
188
Lastpage
192
Abstract
The Department of High-Power Microwave Device in Institute of Electronics, Academia Sinica (IEAS) has developed broad-band klystrons for more than 30 years. In the recent 10 years, various models of high-power broad-band klystron have been studied and manufacturing covering L- and S-band. Typical electrical parameters of these tubes are 1 MW for peak power and 10% for relative bandwidth (-1dB). Most of them have used in military radar systems. In this paper, we give overall consideration of the design of such tubes
Keywords
klystrons; 1 MW; L-band; S-band; broad-band high-gain klystron; design; high-power microwave tube; military radar system; Bandwidth; Circuit simulation; Coaxial components; Coupling circuits; Impedance; Klystrons; Power generation; RLC circuits; Radar; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3619-4
Type
conf
DOI
10.1109/ICMWFT.1996.574828
Filename
574828
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