DocumentCode
2924956
Title
Optically excited electron emission from silicon field emitter arrays
Author
Liu, K.X. ; Campbell, Joe ; Heritage, Jonathan P
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fYear
2000
fDate
7-12 May 2000
Firstpage
352
Lastpage
353
Abstract
Summary form only given.We report on the measurements of efficient CW photo-induced emission from silicon tip arrays as well as its saturation behaviour and nanosecond scale temporal response. We fabricated field emission arrays on 500 /spl mu/m thick p-type silicon substrates. The silicon emitters were formed by using a dry etching process followed by oxidation sharpening.
Keywords
electron emission; etching; oxidation; silicon; vacuum microelectronics; 500 mum; Si; dry etching process; efficient CW photo-induced emission; field emission arrays; nanosecond scale temporal response; optically excited electron emission; oxidation sharpening; p-type silicon substrates; saturation behaviour; silicon emitters; silicon field emitter arrays; silicon tip arrays; Absorption; Anodes; Capacitors; Electron emission; Electron optics; Field emitter arrays; Optical arrays; Optical surface waves; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-634-6
Type
conf
DOI
10.1109/CLEO.2000.907105
Filename
907105
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