Title :
Broadening mechanisms, gain, and low linewidth enhancement factor in InAs quantum-dot lasers
Author :
Newell, T.C. ; Li, H. ; Eliseev, P. ; Liu, G.T. ; Stintz, A. ; Malloy, K.J. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. A detailed understanding of many optical characteristics of quantum dot lasers remains in a nascent stage. However, its density of states function suggests many intriguing features. Here we present experimental investigations of homogeneous broadening, gain, and linewidth enhancement factor measurements in quantum dot laser diodes. A gain model that describes the evolution of the emission spectra along with subsidiary mode suppression is also presented.
Keywords :
III-V semiconductors; indium compounds; infrared spectra; quantum well lasers; semiconductor quantum dots; spectral line breadth; InAs; InAs quantum-dot lasers; broadening mechanism; density of states function; emission spectra; homogeneous broadening; linewidth enhancement factor measurements; low linewidth enhancement factor; nascent stage; optical characteristics; quantum dot laser diodes; subsidiary mode suppression; Artificial intelligence; Bandwidth; Diode lasers; Gratings; Laser modes; Optical waveguides; Optimized production technology; Polarization; Quantum dot lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907121
