Stacked thin film InGaAs and GaAs photodetectors for fully registered wavelength discrimination

Author

Seo, S.W. ; Geddis, D.L. ; Jokerst, N.M. ; Brooke, M.A.

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

841

Abstract

Summary form only given. The fabrication and characterization of co-located, 3D stacked thin film photodetectors is reported. Independent electrical access to each of the two spatially co-located photodetectors has been demonstrated, with two different wavelengths successfully resolved. This heterogeneous 3D integrated multispectral stack offers interesting possibilities in detection for fully registered coarse WDM and multispectral imaging.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor thin films; wavelength division multiplexing; 1300 nm; 850 nm; GaAs; InGaAs; MSM photodetector; Si; SiO₂-Si; fully registered coarse WDM; fully registered wavelength discrimination; heterogeneous 3D integrated multispectral stack; independent electrical access; multispectral imaging; spatially co-located photodetectors; stacked thin film GaAs photodetectors; stacked thin film InGaAs photodetectors; Bonding; Detectors; Etching; Fingers; Gallium arsenide; Indium gallium arsenide; Multispectral imaging; Photodetectors; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159570

Filename

1159570