Title :
Stacked thin film InGaAs and GaAs photodetectors for fully registered wavelength discrimination
Author :
Seo, S.W. ; Geddis, D.L. ; Jokerst, N.M. ; Brooke, M.A.
Abstract :
Summary form only given. The fabrication and characterization of co-located, 3D stacked thin film photodetectors is reported. Independent electrical access to each of the two spatially co-located photodetectors has been demonstrated, with two different wavelengths successfully resolved. This heterogeneous 3D integrated multispectral stack offers interesting possibilities in detection for fully registered coarse WDM and multispectral imaging.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor thin films; wavelength division multiplexing; 1300 nm; 850 nm; GaAs; InGaAs; MSM photodetector; Si; SiO2-Si; fully registered coarse WDM; fully registered wavelength discrimination; heterogeneous 3D integrated multispectral stack; independent electrical access; multispectral imaging; spatially co-located photodetectors; stacked thin film GaAs photodetectors; stacked thin film InGaAs photodetectors; Bonding; Detectors; Etching; Fingers; Gallium arsenide; Indium gallium arsenide; Multispectral imaging; Photodetectors; Substrates; Transistors;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1159570
