• DocumentCode
    2925278
  • Title

    Influence of cap layer on interdiffusion in InP/InGaAs quantum wells

  • Author

    Carmody, C. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • Volume
    2
  • fYear
    2002
  • fDate
    10-14 Nov. 2002
  • Firstpage
    845
  • Abstract
    Summary form only given. Shallow ion implantation was used to study the effect of cap layer and implant temperature in the InP/InGaAs quantum well system. The greatest shifts occur at a dose of 1×1014 cm-2, at 200 °C for the InP capped sample and at room temperature for the InGaAs capped sample.
  • Keywords
    III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; integrated optics; ion implantation; photoluminescence; semiconductor quantum wells; spectral line shift; 200 C; 25 C; InGaAs capped sample; InP capped sample; InP-InGaAs; InP/InGaAs quantum wells; InP:Fe; PL energy shift; cap layer; low temperature photoluminescence spectra; photonic device integration; quantum well interdiffusion; semi insulating InP:Fe substrates; Implants; Impurities; Indium gallium arsenide; Indium phosphide; Laser tuning; Optical device fabrication; Photonic band gap; Quantum well lasers; Rapid thermal annealing; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7500-9
  • Type

    conf

  • DOI
    10.1109/LEOS.2002.1159572
  • Filename
    1159572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2925278