Title :
A new high efficiency solar cell concept based on truncated pyramids
Author_Institution :
Inst. fur Solarenergieforschung, Emmerthal, Germany
Abstract :
A new concept for simple yet effective fabrication of high-efficiency Si solar cells is introduced. Based on the truncation of passivated elevations along the wafer surface, it is applicable for diffused- and induced-junction cells as well as for point contacts and line contacts. As an example, the `truncated-pyramid solar cell´ is discussed, which is characterized by small-area point contacts on top of pyramids whose tips have been removed
Keywords :
elemental semiconductors; p-n junctions; passivation; point contacts; semiconductor materials; silicon; solar cells; Si; Si solar cells; diffused-junction cells; high efficiency; induced-junction cells; line contacts; passivated elevations truncation; point contacts; small-area point contacts; truncated pyramids; wafer surface; Costs; Crystallization; Fabrication; Fingers; Large-scale systems; Passivation; Photoconductivity; Photovoltaic cells; Reflection; Silicon;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520226
