Monolithically integrated multi-mode interferometer array laser using defect induced quantum well intermixing

Author

Walker, C.L. ; Bryce, A.C. ; Marsh, J.H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

2

fYear

2002

fDate

10-14 Nov. 2002

Firstpage

849

Abstract

We present preliminary results from a quantum well intermixed monolithically integrated multi-mode interferometer array laser which potentially offers superior near and far-field characteristics, single-mode power capability, stability, and single-wavelength operation.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; integrated optics; laser modes; laser stability; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; GaAs-AlGaAs; defect induced quantum well intermixing; double quantum well GaAs/AlGaAs material; far-field characteristics; monolithically integrated multi-mode interferometer array laser; near-field characteristics; passive multi-mode interference coupler; single-mode power capability; single-wavelength operation; stability; Etching; Laser cavity resonators; Laser stability; Optical amplifiers; Optical arrays; Optical coupling; Optical resonators; Optical waveguides; Power lasers; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1159574

Filename

1159574