DocumentCode :
2925325
Title :
Monolithically integrated multi-mode interferometer array laser using defect induced quantum well intermixing
Author :
Walker, C.L. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
2
fYear :
2002
fDate :
10-14 Nov. 2002
Firstpage :
849
Abstract :
We present preliminary results from a quantum well intermixed monolithically integrated multi-mode interferometer array laser which potentially offers superior near and far-field characteristics, single-mode power capability, stability, and single-wavelength operation.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; integrated optics; laser modes; laser stability; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; GaAs-AlGaAs; defect induced quantum well intermixing; double quantum well GaAs/AlGaAs material; far-field characteristics; monolithically integrated multi-mode interferometer array laser; near-field characteristics; passive multi-mode interference coupler; single-mode power capability; single-wavelength operation; stability; Etching; Laser cavity resonators; Laser stability; Optical amplifiers; Optical arrays; Optical coupling; Optical resonators; Optical waveguides; Power lasers; Quantum well lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7500-9
Type :
conf
DOI :
10.1109/LEOS.2002.1159574
Filename :
1159574
Link To Document :
بازگشت