1.3 pm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

Summary form only given. High-speed photodetectors operating at 1.3 and 1.55 /spl mu/m are important for long distance fiber optic based telecommunication applications. Different materials such as InGaAs.InSb have been used at these wavelengths. But, the functionality of these photodetectors based on such materials have been limited as they can not be defect-free grown on GaAs based substrates. We fabricated GaAs based photodetectors operating at 1.3 /spl mu/m that depend on internal photoemission as the absorption mechanism. Detectors using internal photoemission have usually very low quantum efficiency (QE). We increased the QE using the resonant cavity enhancement (RCE) effect. The RCE effect also introduced wavelength selectivity which is very important for wavelength division multiplexing (WDM) based communication systems. We report our work on Schottky barrier internal photoemission photodiodes.