40-Gbit/s monolithic digital OEIC composed of a uni-traveling-carrier photodiode and InP HEMTs

Author

Shimizu, N. ; Murata, K. ; Hirano, A. ; Miyamoto, Y. ; Kitabayashi, H. ; Umeda, Y. ; Akeyoshi, T. ; Furata, T. ; Watanabe, N.

Author_Institution

NTT Network Innovation Labs., Kanagawa, Japan

fYear

2000

fDate

7-12 May 2000

Firstpage

382

Abstract

Summary form only given. Speed will be the key attribute of the photoreceivers of fiber-optic communication systems with channel data rates of 40 Gbit/s or over. In this paper, we report on a 40-Gbit/s digital uni-traveling-carrier photodiode (UTC-PD) and InP HEMT digital IC. By directly connecting the UTC-PD to the IC in the chip, we can disregard impedance matching between the connection line and load resistance. This enables us to design in a higher load resistance for the UTC-PD, which increases the drivability of the UTC-PD.

Keywords

HEMT integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; 40 Gbit/s; Gbit/s digital uni-traveling-carrier photodiode; Gbit/s monolithic digital OEIC; InP; InP HEMT digital IC; InP HEMTs; channel data rates; connection line; fiber-optic communication systems; load resistance; photoreceivers; uni-traveling-carrier photodiode; Digital integrated circuits; HEMTs; Indium phosphide; MODFETs; Optical attenuators; Optical receivers; Optical sensors; Optoelectronic devices; Photodiodes; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-634-6

Type

conf

DOI

10.1109/CLEO.2000.907149

Filename

907149