Title :
Luminescence and gain around 1.3 /spl mu/m in PbS quantum dots
Author :
Auxier, J. ; Wundke, K. ; Schulzgen, Axel ; Peyghambarian, N. ; Borrelli, N.F.
Author_Institution :
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
Abstract :
Summary form only given.Strong luminescence and gain is observed for PbS quantum dot (QD) doped glasses at the 1.3 /spl mu/m communications wavelength under CW and pulsed laser excitation, respectively, at 980 nm. This observation generates new interest in PbS QDs as promising candidates as an alternative to Er-doped amplifiers for communications applications. Thermal treatment of an oxide molten glass is an inexpensive method to manufacture semiconductor quantum dot doped glasses with well-defined exciton peaks and small. Inhomogeneous broadening. The PbS QDs studied here have radii much smaller than the bulk exciton Bohr radius providing strong quantum confinement effects. As a result, the exciton resonances can be tuned to the communication wavelengths of 1.3 and 1.55 /spl mu/m by varying the QD size.
Keywords :
II-VI semiconductors; excitons; impurity absorption spectra; infrared spectra; lead compounds; optical glass; photoluminescence; semiconductor doped glasses; semiconductor quantum dots; 1.3 /spl mu/m communications wavelength; 1.3 mum; CW laser excitation; Er-doped amplifiers; PbS quantum dot doped glasses; PbS quantum dots; QD size; bulk exciton Bohr radius; communication wavelengths; exciton peaks; exciton resonances; inhomogeneous broadening; oxide molten glass; pulsed laser excitation; semiconductor quantum dot doped glasses; strong luminescence; strong quantum confinement effects; Excitons; Glass; Laser excitation; Luminescence; Optical pulses; Pulse amplifiers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907153