Gain in 1320-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers

Summary form only given. In InGaNAs the replacement of a few percent of the arsenic atoms by nitrogen leads to a bandgap reduction of up to several hundred meV. The strong shrinkage of the bandgap has been explained by anticrossing between the conduction bands of InGaAs and a degenerate and almost k-independent nitrogen band. We compare two structures: a 6-nm In/sub 0.3/Ga/sub 0.7/N/sub 0.02/As/sub 0.98/ quantum well between 30-nm GaAs barriers and AlGaAs cladding layers and an unstrained 6-nm InGaAs quantum well, between lattice matched 30-nm InGaPAs barriers and InP cladding layers. All calculations are for room temperature and TE-polarized light.