Title :
Low frequency Raman scattering in optical fibers
Author :
McIntosh, C. ; Toulouse, J. ; Yeniay, A. ; Grandpierre, A. ; Christodoulides, D. ; Delavaux, J.-M.P.
Author_Institution :
Dept. of Phys., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Summary form only given. The Raman gain in silica exhibits two main vibrational features, the low frequency Boson peak (/spl sim/75 cm/sup -1/) and the high frequency broad band (/spl sim/440 cm/sup -1/) (1 cm/sup -1/=30 GHz). The broad band arises from the bending motion of Si-O-Si bridges, while the Boson peak arises from what appear to be localized vibrations, although their exact origin is still, being debated. To date, studies of fiber Raman amplifiers (FRAs) have focused on the broadband peak because amplification in this region offers higher gain. We, on the other hand, have studied amplification in the Boson peak region because it may extend the available Raman bandwidth.
Keywords :
Raman lasers; optical fibre amplifiers; optical fibres; silicon compounds; stimulated Raman scattering; vibrational modes; Boson peak; Boson peak region; Raman bandwidth; Raman gain; Si-O-Si bridge; SiO/sub 2/; amplification; bending motion; broadband peak; fiber Raman amplifiers; high frequency broad band; localized vibrations; low frequency Boson peak; low frequency Raman scattering; optical fibers; silica; vibrational features; Bandwidth; Bridges; Broadband amplifiers; Frequency; Optical fiber amplifiers; Optical fibers; Raman scattering; Silicon compounds; Stimulated emission; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
DOI :
10.1109/CLEO.2000.907171
