• DocumentCode
    2926125
  • Title

    Scheduled voltage scaling for increasing lifetime in the presence of NBTI

  • Author

    Zhang, Lide ; Dick, Robert P.

  • Author_Institution
    EECS Dept., Northwestern Univ., Evanston, IL
  • fYear
    2009
  • fDate
    19-22 Jan. 2009
  • Firstpage
    492
  • Lastpage
    497
  • Abstract
    Negative Bias Temperature Instability (NBTI) is a leading reliability concern for integrated circuits (ICs). It gradually increases the threshold voltages of PMOS transistors, thereby increasing delay. We propose scheduled voltage scaling, a technique that gradually increases the operating voltage of the IC to compensate for NBTI-related performance degradation. Scheduled voltage scaling has the potential to increase IC lifetime by 46% relative to the conventional approach using guard banding for ICs fabricated using a 45 nm process.
  • Keywords
    MOS integrated circuits; delays; integrated circuit reliability; power aware computing; scheduling; NBTI; PMOS transistors; delay; guard banding; integrated circuits reliability; negative bias temperature instability; scheduled voltage scaling; size 45 nm; Degradation; Energy consumption; Hydrogen; Integrated circuit reliability; MOSFETs; Negative bias temperature instability; Niobium compounds; Scheduling; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2009. ASP-DAC 2009. Asia and South Pacific
  • Conference_Location
    Yokohama
  • Print_ISBN
    978-1-4244-2748-2
  • Electronic_ISBN
    978-1-4244-2749-9
  • Type

    conf

  • DOI
    10.1109/ASPDAC.2009.4796528
  • Filename
    4796528