Title :
Near-Infrared Femtosecond Laser activation of shallow B and P doped layers
Author :
Wang, Yi-Chao ; Zaitsev, Alexei ; Pan, Ci-Ling ; Shieh, Jia-Min ; Chen, Zun-Hao ; Dai, Bau-Tong
Author_Institution :
Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, ROC
Abstract :
Femtosecond Ti: sapphire laser was employed for ultrashallow junction formation in the dopant activation process. Activation of both p-type and n-type dopants were studied, and only very short diffusion length was observed after activation process.
Keywords :
Boron; Phosphorous; laser activation; shallow junction; Absorption; Electrical resistance measurement; Ion implantation; Lasers and electrooptics; Optical pulses; Rapid thermal annealing; Rapid thermal processing; Silicon; Surface resistance; Temperature; Boron; Phosphorous; laser activation; shallow junction;
Conference_Titel :
Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on
Print_ISBN :
0-7803-9242-6
DOI :
10.1109/CLEOPR.2005.1569740
