An enhanced GaAs monolithic transimpedance amplifier for low noise and high speed optical communications

Author

Casao, J.A. ; Dorta, P. ; Caceres, J.L. ; Salazar-Palma, M. ; Perez, J.

Author_Institution

Dartimento Seniales, Sistemas y Radiocommun., Univ. Politecnica de Madrid, Spain

fYear

1992

fDate

1-5 June 1992

Firstpage

85

Abstract

The design, implementation and test results of a simple GaAs monolithic transimpedance amplifier with enhanced performance for high-speed optical communications are described. A cascode configuration, improved in terms of bandwidth and noise, is used. On-wafer and on-carrier measurements show close agreement with simulated behavior. Excellent performance with high transimpedance gain, a bandwidth from DC to 1.6 GHz, low noise, and low power consumption is obtained. The temperature and bias point sensitivity is negligible. This last item turns out to be a major commercial achievement.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; optical communication equipment; wideband amplifiers; 1.6 GHz; GaAs; LNA; cascode configuration; high speed optical communications; low noise; low power consumption; monolithic transimpedance amplifier; Bandwidth; Gallium arsenide; Low-noise amplifiers; Optical amplifiers; Optical design; Optical fiber communication; Optical noise; Performance gain; Semiconductor optical amplifiers; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187913

Filename

187913