An ultra broadband GaAs MESFET preamplifier IC for a 10 Gb/s optical communication system

Author

Miyashita, M. ; Maemura, K. ; Yamamoto, K. ; Shimura, T. ; Nogami, M. ; Motoshima, K. ; Kitayama, T. ; Mitsui, Y.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1992

fDate

1-5 June 1992

Firstpage

89

Abstract

An ultra broadband GaAs MESFET preamplifier IC is developed for a 10 Gb/s optical communication system. High transimpedance of 44 dB Omega has been obtained for DC to 12 GHz. A receiver has been fabricated by using this preamplifier IC and a photodiode. The receiver operates with extremely low equivalent input noise current of 12.6 pA/ square root Hz for DC to 7.8 GHz. The authors describe the circuit design, the high frequency characteristics of the preamplifier IC, and the receiver.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; digital communication systems; field effect integrated circuits; gallium arsenide; optical receivers; preamplifiers; wideband amplifiers; 0 to 12 GHz; 10 Gbit/s; GaAs; MESFET preamplifier IC; high frequency characteristics; optical communication system; photodiode; receiver; ultra broadband; ultrawideband type; Gallium arsenide; Integrated circuit noise; MESFET integrated circuits; Optical fiber communication; Optical noise; Optical receivers; Photodiodes; Photonic integrated circuits; Preamplifiers; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187914

Filename

187914