Title :
Millimetre wave receiver components using packaged HEMTs
Author :
Ashoka, H. ; Waris, V. ; Martin, P.
Author_Institution :
Mitec Ltd., Seventeen Mile Rocks, Australia
Abstract :
A narrowband low-noise amplifier (LNA) and a mixer at 30 GHz have been developed using packaged commercial HEMTs (high electron mobility transistors) and waveguide matching circuits. The four-stage HEMT LNA provided 26 dB gain and a 2.8 dB noise figure at 30 GHz. The HEMT mixer provided a conversion gain of 0.5 dB with 5 dB noise figure. The design features very simple construction and tuning.<>
Keywords :
high electron mobility transistors; microwave amplifiers; mixers (circuits); radio receivers; solid-state microwave circuits; tuning; 0.5 dB; 2.8 dB; 26 dB; 30 GHz; 5 dB; EHF; MM-wave receiver; four-stage HEMT LNA; high electron mobility transistors; low-noise amplifier; millimetre-wave type; mixer; narrowband; packaged HEMTs; receiver components; tuning; waveguide matching circuits; Circuit noise; Frequency; Gain; HEMTs; Inductance; Low-noise amplifiers; MODFETs; Microstrip; Noise figure; Packaging;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187920
