Title :
Application of film bulk acoustic resonators
Author :
Horwitz, S. ; Milton, C.
Author_Institution :
Westinghouse Electron. Syst. Group, Baltimore, MD, USA
Abstract :
Multipole film bulk acoustic resonator (FBAR) bandpass filters are being designed and fabricated on various substrates, including silicon and GaAs. Capable performance has been demonstrated for the large number of system insertions within the low microwave (1-3 GHz) range. Progress in applying FBARs to microwave system applications is reviewed. Refinements in processing of critical piezoelectric films on semiconductor substrates have allowed filter development for specific products to begin. Key tradeoffs involve substrate choice and level of monolithic integration to meet performance and yield requirements.<>
Keywords :
acoustic microwave devices; acoustic resonators; band-pass filters; crystal filters; crystal resonators; microwave filters; passive filters; solid-state microwave devices; 1 to 3 GHz; GaAs; Si substrate; UHF; bandpass filters; film bulk acoustic resonators; microwave system applications; monolithic integration; piezoelectric films; semiconductor substrates; Band pass filters; Circuits; Costs; Film bulk acoustic resonators; Filter bank; MMICs; Microwave filters; Microwave frequencies; Passband; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.187935
