Application of film bulk acoustic resonators

Author

Horwitz, S. ; Milton, C.

Author_Institution

Westinghouse Electron. Syst. Group, Baltimore, MD, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

165

Abstract

Multipole film bulk acoustic resonator (FBAR) bandpass filters are being designed and fabricated on various substrates, including silicon and GaAs. Capable performance has been demonstrated for the large number of system insertions within the low microwave (1-3 GHz) range. Progress in applying FBARs to microwave system applications is reviewed. Refinements in processing of critical piezoelectric films on semiconductor substrates have allowed filter development for specific products to begin. Key tradeoffs involve substrate choice and level of monolithic integration to meet performance and yield requirements.<>

Keywords

acoustic microwave devices; acoustic resonators; band-pass filters; crystal filters; crystal resonators; microwave filters; passive filters; solid-state microwave devices; 1 to 3 GHz; GaAs; Si substrate; UHF; bandpass filters; film bulk acoustic resonators; microwave system applications; monolithic integration; piezoelectric films; semiconductor substrates; Band pass filters; Circuits; Costs; Film bulk acoustic resonators; Filter bank; MMICs; Microwave filters; Microwave frequencies; Passband; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.187935

Filename

187935